MOLLIS RPS

Inductively coupled plasma (ICP) source for remote plasma processing

Description
The MOLLIS RPS is a high-frequency inductively coupled plasma (ICP) source designed for precision processing of sensitive materials in semiconductor and microelectronics manufacturing, including:
•    Low-damage etching of delicate structures
•    Photoresist stripping (ashing)
•    Radical-assisted deposition
•    Surface activation
The system utilizes a 2.64 MHz cylindrical spiral antenna coupled with a quartz discharge chamber to generate:
•    Low-temperature plasma (electron temperature Tₑ < 5 eV, ion temperature Tᵢ < 0.15 eV)
•    High radical density (>90% gas dissociation efficiency)
•    Plasma density: 10¹⁰ – 10¹³ cm⁻³
•    Operating pressure range: 10–100 Pa

The main advantages
- Ultra-gentle processing – Minimal ion bombardment damage for sensitive substrates.
- Exceptional radical generation – High etch/process rates due to >90% gas dissociation.
- Pure plasma environment – Quartz/ceramic reactor construction (no silicone contamination).
- Compact integrated design – Built-in RF generator with automatic matching.
- Precise plasma control – Stable low-energy plasma across wide pressure range.