Technological devices for Ion-plasma processing
ION-BREEZE
High-frequency single-grid ion source with self-neutralizing ion beam
Ion beam diameter 100 - 400 mm
Ion energy 10 - 250 eV
Ion current density 0.5 - 6 mA/cm2
Designed for use in ion beam-assisted processing, plasma etching, cleaning, plasma-chemical etching, sputtering, and other applications.
ION-TYPHOON
Gridded RF Ion Sources
Ion beam diameter 100 - 300 mm
Ion energy 150 - 1500 eV
Ion current density up to 4 mA/cm2
Designed for ion beam-assisted processing, sputtering, etching, cleaning, polishing, and other applications.
E-MONSOON
High-Frequency Electron Source (Beam Neutralizer)
Electrons current up to 1000 mA
Electrons energy 5 - 50 eV
Electron sources are designed for use in ion beam sputtering processes and for neutralizing the positive charge of ion beams.
PLASMA-CALM
Inductively Coupled Plasma (ICP) Source for Precision Processing
Plasma formation diameter: 150-450 mm
Plasma density (nₑ): up to 10¹³ cm⁻³
Electron temperature: <5 eV
The sources are designed for plasma and plasma-chemical processing.
MOLLIS-RPS
Inductively Coupled Plasma (ICP) Sources for Remote Plasma Processing
Plasma formation diameter: 60 mm
Plasma density (nₑ): up to 10¹³ cm⁻³
Dissociation degree: >90%
Designed for radical-based processing, etching, deposition, and material removal in microelectronics manufacturing.
ION-IMBREM
Capacitively Coupled Plasma (CCP) Sources for Direct Plasma Processing
Electrode diameter: 200 mm
Plasma density (nₑ): up to 10¹¹ cm⁻³
Ion energy: 10-800 eV
Designed for plasma processing systems including:
-
Plasma-enhanced chemical vapor deposition (PECVD)
-
Plasma etching (chemical and reactive ion etching modes)
-
Surface cleaning and activation
-
Related plasma-assisted processes