PRODUCTS | Freegy LLC

Technological devices for Ion-plasma processing

Ion beam diameter 100 - 400 mm

Ion energy 10 - 250 eV

Ion current density 0.5 - 6 mA/cm2

Designed for use in ion beam-assisted processing, plasma etching, cleaning, plasma-chemical etching, sputtering, and other applications.

Ion beam diameter 100 - 300 mm

Ion energy 150 - 1500 eV

Ion current density up to 4 mA/cm2

Designed for ion beam-assisted processing, sputtering, etching, cleaning, polishing, and other applications.

Electrons current up to 1000 mA

Electrons energy 5 - 50 eV

Electron sources are designed for use in ion beam sputtering processes and for neutralizing the positive charge of ion beams.

Plasma formation diameter: 150-450 mm

Plasma density (nₑ): up to 10¹³ cm⁻³

Electron temperature: <5 eV

The sources are designed for plasma and plasma-chemical processing.

Plasma formation diameter: 60 mm

Plasma density (nₑ): up to 10¹³ cm⁻³

Dissociation degree: >90%

Designed for radical-based processing, etching, deposition, and material removal in microelectronics manufacturing.

Electrode diameter: 200 mm

Plasma density (nₑ): up to 10¹¹ cm⁻³

Ion energy: 10-800 eV

Designed for plasma processing systems including: